Home > Seminars > Enhanced Materials and Device Functionality Through Novel Growth and Integration Techniques

Enhanced Materials and Device Functionality Through Novel Growth and Integration Techniques

Start:

12/19/2017 at 11:00AM

End:

12/19/2017 at 12:00PM

Location:

258 Fitzpatrick Hall

Host:

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Thomas Fuja

Thomas Fuja

VIEW FULL PROFILE Email: tfuja@nd.edu
Phone: 574-631-7244
Office: 275 Fitzpatrick Hall

Affiliations

Wireless Institute Professor
Prof. Fuja research addresses reliable communication over inherently unreliable and/or constrained communication links. He has recently focused his research on the changing role that channel codes play in the context of wireless networks, i.e., to not only provide physical-layer robustness but ...
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574-631-7244
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The integration of novel logic and memory devices into CMOS process flows with a goal of improving system-level Energy-Delay-Product (EDP) for data abundant applications will be discussed.  Focusing on materials growth and integration techniques that utilize non-equilibrium, kinetically restricted strategies, coupled with in-situ characterization, enables the realization of atomic configurations and materials that are challenging to make but once attained, display enhanced and unique properties.  These strategies become necessary for most future technologies where thermal budgets are constrained and conformal growth over selective areas and 3-dimensional structures are required.  To illustrate these concepts, we will highlight both “conventional materials” growth/gate stack formation and novel semiconductors that enable devices based on quantum effects, spin, and reconfigurability (including 2D materials and topologically protected materials and devices).  A focused discussion of materials growth and integration, performed in collaboration with Notre Dame researchers in the LEAST center, will illustrate how these techniques can lead to new understanding and devices for future applications. 

This work is supported in part by the Center for Low Energy Systems Technology (LEAST), one of six centers supported by the STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program sponsored by MARCO and DARPA. It is also supported by the National Science Foundation (NSF), Intel, Texas Instruments, and the SWAN Center, a SRC center sponsored by the Nanoelectronics Research Initiative and NIST.

Seminar Speaker:

Christopher Hinkle

Christopher Hinkle

University of Texas at Dallas

Christopher Hinkle is an Associate Professor of Materials Science and Engineering with affiliated positions in the Department of Electrical Engineering and the Physics Department at the University of Texas at Dallas, joining the faculty in the fall of 2009. He received his Ph.D. degree in 2005 in physics from North Carolina State University. Dr. Hinkle's interdisciplinary research focuses on the growth, characterization, and device physics of semiconductor materials and interfaces for use in a wide variety of devices.  He is particularly interested in the heterogeneous integration of conventional and novel materials for applications related to advanced CMOS and power devices, energy harvesting, and energy storage. He has authored or co-authored over 95 publications in peer-reviewed journals and presented more than 65 contributed and 37 invited talks at international meetings.  He is a member of numerous professional organizations including APS, AVS, ECS, IEEE, and MRS.