Home > Seminars > Synthesis, Optoelectronic Properties and Device Exploration of Hexagonal Boron Nitride Epitaxial Layers

Synthesis, Optoelectronic Properties and Device Exploration of Hexagonal Boron Nitride Epitaxial Layers

Start:

4/4/2014 at 12:30PM

End:

4/4/2014 at 1:30PM

Location:

356 Fitzpatrick Hall

Host:

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Huili (Grace) Xing

Huili (Grace) Xing

VIEW FULL PROFILE Email: grace.xing@cornell.edu
Phone: 607-255-0605

Affiliations

College of Engineering Adjunct Professor
Research Interests: The topics I work on now can be loosely categorized into 4 areas, supported by DoD, NSF, NRI and ND. 1). GaN based devices. The current projects include AlN/GaN ultrascaled high electron mobility transistors for high-speed high power applications, polarization doping for p-type ...
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607-255-0605
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Among the members of the III-nitride materials system, boron-nitride (BN) is the least studied and understood. Due to its extraordinary physical properties, including high temperature stability, dielectric strength, optical absorption, negative electron affinity, neutron capture cross section, and corrosion resistance, BN has emerged as the material of choice for many device applications. Due to its similar in-plane lattice constant to graphene and chemical inertness and resistance to oxidation, hexagonal BN (hBN) is also considered as an ideal material for the exploration of van der Waals heterostructures made layer by layer between hBN/graphene related materials with new physics and applications. Over the last 5 years, our group has been developing MOCVD growth processes for producing single crystal hBN epilayers. The band edge emission of hBN is more than two orders of magnitude higher than that of high quality AlN with a comparable energy bandgap ( 6 eV), attributed partly to the 2D nature of hBN. Based on the graphene optical absorption concept, the estimated band-edge absorption coefficient of hBN is about 7x105/cm, which is 3 times larger than that of AlN. The hBN epilayer based photo detectors exhibit a sharp cut-off wavelength around 230 nm. The exciton emission in 3D hBN exhibits 2D features. Recent developments in the exploitation of a novel deep UV emitter layer structure based on hBN and AlGaN p-n junction and doping engineering to potential overcome the intrinsic problem of low p-type conductivity (or low free hole concentration) in Al-rich AlGaN will be summarized. The potential of hBN as a solid-state neutron detector material will be discussed. Our results represent a major step towards the realization of hBN based practical photonic and optoelectronic devices.

Seminar Speaker:

Professor Jingyu Lin

Professor Jingyu Lin

Texas Tech University

Jingyu Lin is the Linda Whitacre Endowed Chair Professor of Electrical and Computer Engineering at Texas Tech University. She has made pioneering contributions to the material synthesis, photonic device fabrication, and practical applications of III-nitride semiconductors. She has 340 publications, 10 book chapters and 20 patents with over 10000 citations and an H-index of 55. She earned her BS from SUNY College at Oneonta and her Ph.D. in Physics from Syracuse University. She relocated to Texas Tech in 2008 from Kansas State University where she was a Professor of Physics. Professor Lin is a fellow of the American Physical Society.