Home > Seminars > Two-Terminal Nanoscale Resistive Switches for Memory and Computing

Two-Terminal Nanoscale Resistive Switches for Memory and Computing

Start:

4/26/2013 at 1:00PM

End:

4/26/2013 at 2:00PM

Location:

318 DeBartolo

Host:

College of Engineering close button
headerbottom

Susan Fullerton

Susan Fullerton

VIEW FULL PROFILE Email: sfullert@nd.edu
Phone: 574-631-1367
Website: http://www.nd.edu/~sfullert
Office: 317 Cushing Hall

Affiliations

Department of Electrical Engineering Research Asssistant Professor
College of Engineering Research Assistant Professor
Research Interests: Ion gating for nanoelectronics, two-dimensional (2D) electronic devices, polymers for energy storage, polymer brushes for drug delivery, and block copolymer nanoprobes for biomedical imaging. 
Click for more information about Susan
574-631-1367
Add to calendar:
iCal vCal
Bookmark and Share
I will discuss my group’s work on two-terminal, nanoscale resistive switches (memristors) and their potential applications in memory and computing systems. Two types of devices – one with abrupt resistance change (digital) and one with incremental resistance change (analog) have been developed by choosing the proper combinations of electrode and switching materials, film stack and programming conditions. The digital devices show desirable performance metrics as “the next switch” in terms of scalability, speed, ON/OFF ratio, endurance and retention. Detailed TEM studies have been carried out to verify the switching mechanism. Functional high-density crossbar arrays have been integrated directly on top of CMOS circuits using a back-end-of-line (BEOL) process, enabling hybrid non-volatile memory and reconfigurable circuit applications. The analog devices exhibit incremental conductance changes that are analogous to the behaviors of biological synapses. Besides the ability to emulate synaptic behaviors phenomenologically, the internal ionic dynamics of these devices allow them to implement a number of important synaptic functions realistically. These analog memristive devices are well suited for hardware-based, bio-inspired neuromorphic circuits. Device and SPICE models based on properly chosen internal state variables have also been developed for the understanding and applications of these devices at the circuit level.

Seminar Speaker:

Wei Lu

Wei Lu

University of Michigan

Wei Lu received the B.S. degree in physics from Tsinghua University, Beijing, China, in 1996, and the M.A. and Ph.D. in physics from Rice University, Houston, Texas in 1999 and 2003, respectively. From 2003 to 2005, he was a postdoctoral research fellow at Harvard University, Cambridge, Massachusetts. In 2005, he joined the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan – Ann Arbor as an Assistant Professor and is currently an Associate Professor. His research interest includes high-density memory based on two-terminal resistive switches (RRAM), memristor-based neuromorphic circuits, aggressively scaled nanowire transistors, and electrical transport in low-dimensional systems. He has published over 60 journal papers that have been cited over 6000 times to date. Prof. Lu is a co-Editor-in-Chief for Nanoscale, a member of the ITRS’s Emerging Research Device Working Group, a member of IEEE, APS, MRS, an active member of two IEEE technical committees and several program committees. He is a recipient of the NSF CAREER Award in 2009 and the EECS Outstanding Achievement Award in 2012.