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Graphene based RF Devices and Circuits

This research focuses on the fabrication and optimization of graphene based devices for practical applications.? Graphene is a recently discovered material that has attracted great interest in recent years for its unique physics, high carrier mobility, symmetric ambipolar behavior, and 2-dimensional planar structure.? It consists of a hexagonal lattice of sp2 hybridized carbon atoms, where the delocalized pi-bonds and unique, linear band structure lead to phenomenal electronic transport properties, with reported mobilities as high as 200,000 cm2/V sec.? Although graphene devices have made significant progress in a very short period of time, there are several fundamental challenges that must be overcome to develop a practical graphene based technology for digital or analog applications.? Primary among these challenges are 1) the semi-metal nature of graphene (lack of true bandgap), which limits the on-off ratio of graphene devices to the order of 10; 2) development of low contact resistance metal-graphene contact; and 3) control of graphene growth and materials integration in order to preserve the excellent electronic properties of graphene in practical devices.? Our research aims to address these key areas while providing insight into the fundamental limits facing graphene based devices.? Currently, efforts are focused on work function engineering at the metal-graphene interface to optimize device performance and reduce parasitic resistances, reducing access resistance through use of source/drain doping and/or self-aligned processes, and demonstration of optimized, deep sub-micron gate length RF transistors with excellent extrinsic RF performance.

Graphene based RF Devices and Circuits