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Variation in Emerging Devices

This research compares the variation handling capabilities of Silicon and III-V based novel devices. FINFETs or Tri-Gate transistors have emerged as promising device architecture for 22nm node and beyond logic applications. For sub-10nm node applications, high mobility III-V materials such as In0.53Ga0.47As are under investigation to replace the Silicon channel in FINFETs to further enhance performance. Strong quantum confinement effects in In0.53Ga0.47As FINFETs make them more sensitive to Fin LER variation than Silicon. However, better electrostatics in In0.53Ga0.47As, due to higher effective channel length from lower SD doping, reduces LG variation impact in In0.53Ga0.47As FINFETs that compensates for the increased variation from quantum confinement effect. Tighter control of Fin LER in In0.53Ga0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications. This program is supported by Lam Research Corporation.

Variation in Emerging Devices